As a group of three students you will prepare a 6-page term-paper analyzing an important semiconductor devices publication. You are free to pick the publication, but since you may prefer to take suggestions, you are free to also choose from publications listed below. The only constraint is that you must pick an original research article (no review articles – they are incompatible with the goals of the term paper). This year, because of the large number of teams, we will not have term-paper presentations.
The goal will be to describe a major milestone: what big problem was solved, how it was solved, and why it is important?
The deadline for selecting teams and papers is March 20th but I recommend you pick before this.
Submit your paper selection replying to the discussion on Canvas, with the paper details and the names of the team members.
Typed reports will be due April 14th.
Formatting: No smaller than 10 pt font and no smaller than 2 cm margins.
Length: 6 pages, references can be on page 7+ and do not count in the page limit
Organization: Use the following headings, and address the content below. The papers will be evaluated on how well you address the points below.
Section 1: Introduction (< 1 page)
Background on the area of research or technology
What are the open questions and what does the paper you are studying address?
Section 2: Previous state of the art (< 1 page)
Summary of previous work on the open question illustrating the state-of-the-art results.
You decide what is the important past work, but use the paper you review as a guide.
Section 3: Results and Discussion (~3.5 pages)
What methods were used to study the open problem?
What are the results?
Discussion of what was learned about the open problem?
Comparison to previous work.
What future work is important?
Section 4: Conclusion (0.5 page)
Summarize the problem and the main conclusion.
Summarize what future work is important.
The paper we have picked is
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's, IEEE ELECTRON DEVICE LETTERS, 10.1109/55.568766
